Home>Products>Ultra デュエルビッツ 入金不要ボーナスressure Equipment>High Temperature and デュエルビッツ 入金不要ボーナスressure Equipment>デュエルビッツ 評判static Pressing (HIP) Equipment
デュエルビッツ 入金不要ボーナスiconductor Single Crystal Manufacturing Equipment
It is required for the デュエルビッツ 入金不要ボーナスiconductor crystal to perform lower dislocation density and enlargement of diameter for higher performance and lower cost. In response to the demand, we have developed single crystal manufacturing equipment using the high pressure vertical Bridgman (VB) method.
What is the VB Method?
It is a method to cool down and solidify materials that are melted in a crucible while moving down through a vertically set furnace. - Makes low dislocation density and high quality crystal growth possible due to low thermal stress on the grown crystal.
- Requires no diameter control due to use of a crucible and wafers can be cut out with high yield ratios.
Equipment Features
- Easy-opening and -closing of containers with a user-friendly pressure keeping mechanism.
- Precise temperature control available by highly independent multi-zone heaters.
- Structure with easy setting and removal of a crystal, and maintenance of the heating system.
- Easy input of operating patterns with a man-machine interface.
- Composition control of high dissociation pressure components by vapor pressure control systems (Option).
Typical Specifications
| Maximum Temperature | 1650°C |
|---|---|
| Maximum Pressure | 9.8MPa (100kgf/cm2) |
| Crucible Dimensions | Φ2 inches X 150mmL |
| Heater Type | 6-Zone Highly Purity Graphite Heater |
| Pressure Support System | Press Frame |
Examples of Application
| Growth Conditions | |
|---|---|
| Crystal Size | 2 inches |
| Crystal Growth Orientation | <100 and <111 |
| Dopant | S-Doped, Undoped |
| Pressure | 7.8MPa(Argon Gas) |
| Growth Rate | 3mm/hr |
This equipment is suitable for manufacturing of various デュエルビッツ 入金不要ボーナスiconductors including GaAs, GaP and InP (Group III-V) and ZnSe (Group II-VI). The following figure gives an example of the dislocation density distribution of GaP single crystal. It has been reduced to 740 cm-2 for undoped semiconductors and 10cm-2 or less for S-doped, which result in less than 1% compared with the conventional equipment (LEC).
Dislocation Density Distribution of GaP Single Crystal
We also design and manufacture other equipment such as annealing furnaces, material synthesis apparatuses and ultraデュエルビッツ 入金不要ボーナスressure single crystal manufacturing equipment (1 GPa-class).
Medium-and Large-Scale HIP Equipment- デュエルビッツ ボーナス Kobe Steel, Ltd.,TEL:+81-3-5739-6761
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We welcome your questions about our ultra デュエルビッツ 入金不要ボーナスressure equipment and high temperature, デュエルビッツ 入金不要ボーナスressure technologies.
New Business Development Department
Machinery Business
デュエルビッツ 入金不要ボーナスel, Ltd.
TEL:+81-3-5739-6761
(10 a.m. to 5 p.m. on Weekdays)
